Korea University of Technology and Education | South Korea
Prof. Yeong-Cheol Kim is an accomplished academic and research innovator in the field of materials engineering, renowned for his pioneering work in semiconductor materials, atomic layer deposition (ALD), and computational materials science. With an illustrious career spanning both academia and industry, he has been instrumental in advancing the understanding of atomic-scale phenomena that underpin the next generation of semiconductor technologies. His research bridges theoretical modeling and practical experimentation, driving technological innovations that impact microelectronics, nanotechnology, and materials design. A distinguished scholar in electronic materials and semiconductor interfaces, Prof. Kim’s work focuses on the synthesis, modeling, and optimization of thin films through atomic layer deposition (ALD). By integrating density functional theory (DFT) simulations with experimental data, he has elucidated complex mechanisms of surface reactions and precursor interactions, leading to improved film uniformity and device performance. His deep insights into ALD chemistry have informed industrial practices, particularly in the development of advanced semiconductor processes and the miniaturization of electronic components. Through his innovative research, he has established a scientific foundation for the controlled fabrication of atomic-scale materials—an essential step toward high-performance, energy-efficient devices. Prof. Kim’s scholarly impact is reflected in his extensive publication record of over 120 SCI-indexed journal articles in prestigious international journals, covering areas such as solid-state chemistry, surface science, and computational modeling. His research contributions have accumulated more than 1,500 citations with an h-index of 20, underscoring the influence of his work on the global materials science community. Beyond publications, he has contributed to the field through patents under development, highlighting his focus on translating scientific discoveries into real-world applications. His ongoing efforts in precursor design, surface interface engineering, and nanoscale simulation continue to shape the evolution of semiconductor technologies. In recognition of his profound influence on semiconductor material innovation, computational modeling, and atomic-scale engineering, Prof. Kim stands as a leading figure in materials science research. His multidisciplinary approach—merging theory, simulation, and application—epitomizes the transformative spirit of scientific invention. His work not only advances the frontiers of semiconductor technology but also contributes significantly to sustainable and intelligent materials design. Prof. Kim’s distinguished record of achievement and commitment to scientific excellence make him an exemplary nominee for the Best Researcher Award under the International Invention Awards program.
Featured Publications
Kim, Y.-C. (2019). Nonlocal Harnack inequalities for nonlocal heat equations. Journal of Differential Equations, 267(11), 6691–6757.
Kim, Y.-C. (2009). Carleson measures and the BMO space on the p-adic vector space. Mathematische Nachrichten, 282(9), 1278–1304.
Kim, Y.-C., & Lee, K. A. (2012). Regularity results for fully nonlinear integro-differential operators with nonsymmetric positive kernels. Manuscripta Mathematica, 139(3), 291–319.
Kim, Y.-C. (2008). Weak type estimates of square functions associated with quasiradial Bochner–Riesz means on certain Hardy spaces. Journal of Mathematical Analysis and Applications, 339(1), 266–280.
Kim, S., Kim, Y.-C., & Lee, K. A. (2016). Regularity for fully nonlinear integro-differential operators with regularly varying kernels. Potential Analysis, 44(4), 673–705.
Kim, Y.-C., & Lee, K. A. (2013). Regularity results for fully nonlinear parabolic integro-differential operators. Mathematische Annalen, 357(4), 1541–1576.
Kim, Y.-C., & Lee, K. A. (2013). Regularity results for fully nonlinear integro-differential operators with nonsymmetric positive kernels: Subcritical case. Potential Analysis, 38(2), 433–455.