Associate professor, Scientific Faculty of Monastir, Unversity of Monastir, Tunisia
Mohsen Choubani is an Associate Professor of Physics at the Scientific Faculty of Monastir (F.S.M), Tunisia, specializing in Micro-Opto-Electronic and Nanostructures. Born on September 17, 1971, in Mahdia, Tunisia, he has dedicated over 27 years to education and research. Choubani is married with four children and actively contributes to academic and scientific communities.
Profile
scopus
Education šĀ Ā
Mohsen Choubani is an Associate Professor of Physics at F.S.M, Tunisia. He earned his Ph.D. in Physics in April 2011 with the distinction of “Very Honorable” from the Faculty of Sciences of Tunis. Prior to that, he completed a Thorough Studies Diploma (DEA) in Physics in December 1997 with a “Pretty Good” distinction at F.S.M, Tunisia. He also holds a Mastery in Physics, awarded in July 1995 with a “Pretty Good/Quite” distinction from the same institution. Mohsen began his academic journey with a Baccalaureate in Experimental Science, which he received in June 1991 from the High School of Ksour-essef, Mahdia.
Professional Experience š¼
Mohsen Choubani has a diverse and extensive teaching career. Since September 2022, he has been serving as an Associate Professor at the Faculty of Sciences of Monastir (F.S.M), Tunisia. Prior to this role, he was an Assistant Professor at F.S.M from September 2012 to July 2022, following his time as a Higher Education Assistant in September 2010. His career in education began as a Secondary School Teacher, a position he held from September 1997 to 2010. In addition to his full-time roles, Mohsen has experience as a Part-Time Teacher at both the Higher Institute of Computer Science of Mahdia (2006-2007) and F.S.M (1996-1997).
Research Interests š¬
Modeling and Optimization of Non-linear Optical Properties in Quantum Dots, Quantum Rings, and Nano-Holes
The exploration of non-linear optical properties in quantum systems like quantum dots, quantum rings, and nano-holes (droplets) is pivotal for advancing photonics and optoelectronics. These quantum structures exhibit unique behaviors under varying electromagnetic fields, enabling the manipulation of light at the nanoscale. Modeling these properties involves complex computational techniques to optimize their performance in various applications, such as quantum computing, high-resolution imaging, and ultrafast communication technologies. By understanding and optimizing the interactions within these nanostructures, researchers can develop innovative solutions for next-generation optical devices.
Electromagnetic Modeling of Non-homogeneous Planar Structures, Photonic Crystals, and Electronic Transport through Semiconductor Barriers
In the realm of electromagnetic modeling, non-homogeneous planar structures, photonic crystals, and semiconductor barriers are critical components that shape the behavior of light and electronic transport at the microscopic level. Non-homogeneous planar structures, with their varying material properties, influence wave propagation in ways that can be harnessed for novel optical devices. Photonic crystals, with their periodic structures, allow for the control of light in unprecedented ways, leading to the development of highly efficient waveguides, sensors, and filters. Furthermore, understanding electronic transport through semiconductor barriers is essential for designing advanced electronic and optoelectronic components, including transistors, diodes, and quantum devices. Through meticulous modeling and analysis, these elements contribute to the cutting-edge development of technologies that rely on precise electromagnetic interactions.
Awards š
Numerous acknowledgments for contributions to physics education and research
Publications Top Notes š
Benzerroug, N., & Choubani, M. (2024). Effects of hills, morphology, electromagnetic fields, temperature, pressure, and aluminum concentration on the second harmonic generation of GaAs/AlxGa1-xAs elliptical quantum rings. Results in Physics, 63, 107883. (Cited by: 1) link
Choubani, M., & Benzerroug, N. (2024). Design of a frequency multiplier based on laterally coupled quantum dots for optoelectronic device applications in the Tera-Hertz domain: Impact of inhomogeneous indium distribution, strains, pressure, temperature, and electric field. Journal of Electronic Materials, 53(25). (Cited by: 1) link
Benzerroug, N., Makhlouf, D., & Choubani, M. (2023). Pressure, temperature, and electric field effects on linear and nonlinear optical properties in InxGa1-xAs/GaAs strained quantum dots: under indium segregation and In/Ga intermixing phenomena. Physica B, 658, 414819. (Cited by: 3) link
Makhlouf, D., Benzerroug, N., & Choubani, M. (2023). Tailoring of the Nonlinear Optical Rectification in vertically and laterally coupled InxGa1-xAs/GaAs quantum dots for Tera-hertz applications: under In/Ga inter-diffusion, indium segregation, and strains effects. Results in Physics, 48, 106457. (Cited by: 2) link
Choubani, M., Maaref, H., & Saidi, F. (2022). Linear, third-order nonlinear and total absorption coefficients of a coupled InAs/GaAs lens-shaped core/shell quantum dots in terahertz region. European Physical Journal Plus, 137, 265. (Cited by: 5) link